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ct micro rev 2 proprietary & confidential page 1 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler package outline schematic note: different bending options available. see pack age dimension. features ? ?? ? high isolation 5000 vrms ? ?? ? ctr flexibility available see order information ? ?? ? dc input with transistor output ? ?? ? operating temperature range - 55 c to 110 c ? ?? ? regulatory approvals ul - ul1577 (e364000) vde - en60747-5-5(vde0884-5) cqc ? gb4943.1, gb8898 iec60065, iec60950 applications ? ?? ? switch mode power supplies ? ?? ? computer peripheral interface ? ?? ? microprocessor system interface description the 4n25, 4n26, 4n27, 4n28, 4n35, 4n36, 4n37, 4n38, h11a1, h11a2, h11a3, h11a4, h11a5 series consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lea d dip package different lead forming options.
ct micro rev 2 proprietary & confidential page 2 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler absolute maximum rating at 25 o c symbol parameters ratings units notes v iso isolation voltage 5000 v rms t opr operating temperature -55 ~ +110 o c t stg storage temperature -55 ~ +150 o c t sol soldering temperature 260 o c emitter i f forward current 60 ma i f(trans) peak transient current ( 1 s p.w,300pps) 1 a v r reverse voltage 6 v p d power dissipation 100 mw detector p d power dissipation 150 mw b vceo collector-emitter breakdown voltage 80 v b vcbo collector-base breakdown voltage 80 v b veco emitter-collector breakdown voltage 7 v b vebo emitter-base breakdown voltage 7 v
ct micro rev 2 proprietary & confidential page 3 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler electrical characteristics t a = 25c (unless otherwise specified) emitter characteristics symbol parameters test conditions min typ max units notes v f forward voltage i f =10ma 1.24 1.4 v i r reverse current v r = 6v - - 5 a c in input capacitance f= 1mhz - 45 - pf detector characteristics symbol parameters test conditions min typ max units notes b vceo collector-emitter breakdown i c = 0.1ma 80 - - v b veco emitter-collector breakdown i e = 0.1ma 7 - - v b vcbo collector-base breakdown i c = 0.1ma 80 - - v b vebo emitter-base breakdown i e = 0.1ma 7 - - v i ceo collector-emitter dark current 4n25,4n26,4n27,4n28 h11a1,a2,a3,a4,a5 v ce = 10v, i f =0ma - - 50 na 4n35,4n36,4n37,4n38 v ce =60v, i f =0ma - - 50 na i cbo collector-base dark current v cb = 10v, i f =0ma - - 20 na transfer characteristics symbol parameters test conditions min typ max units notes ctr current transfer ratio 4n35 i f = 10ma, v ce = 10v 100 - - % 4n25,4n26, 4n38, h11a2, h11a3 20 - - 4n27, 4n28, h11a4 10 - - h11a1 50 - - h11a5 30 - - 4n36 i f = 2ma, v ce = 5v 130 - 260 4n37 200 - 400 v ce(sat) collector-e mitter saturation voltage 4n25,4n26, 4n27,4n28 i f = 50ma, i c = 2ma - - 0.5 v 4n35,4n36,4n37 i f = 10ma, i c = 0.5ma - - 0.3 h11a1,h11a2, h11a3,h11a4,h11a5 - - 0.4 4n38 i f = 20ma, i c = 4ma - - 1.0
ct micro rev 2 proprietary & confidential page 4 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler transfer characteristics r io isolation resistance v io = 500v dc 1x10 11 c io isolation capacitance f= 1mhz 0.25 pf switching characteristics symbol parameters test conditions min typ max units notes t on turn on time 4n25,4n26,4n27,4n28 h11a1,a2,a3,a4,a5 i f = 10ma, v cc = 10v, r l = 100 - 4.3 9.8 s 4n35,4n36,4n37,4n38 i c = 2ma, v cc = 10v, r l = 100 - 9.8 11.5 t off turn off time 4n25,4n26,4n27,4n28 h11a1,a2,a3,a4,a5 i f = 10ma, v cc = 10v, r l = 100 - 3.9 9.8 s 4n35,4n36,4n37,4n38 i c = 2ma, v cc = 10v, r l = 100 - 6.9 11.5
ct micro rev 2 proprietary & confidential page 5 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler typical characteristic curves
ct micro rev 2 proprietary & confidential page 6 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler
ct micro rev 2 proprietary & confidential page 7 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler
ct micro rev 2 proprietary & confidential page 8 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler package dimension dimensions in mm unless otherwise stated standard dip ? through hole wide lead forming ? through hole (m type)
ct micro rev 2 proprietary & confidential page 9 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler surface mount forming (s type) surface mount forming (low profile) (sl type)
ct micro rev 2 proprietary & confidential page 10 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler recommended solder mask dimensions in mm unless otherwise stated marking information note: ct : denotes ?ct micro? 4n35 : part number y : fiscal year ww : work week k : manufacturing code ct 4n35 ywwk
ct micro rev 2 proprietary & confidential page 11 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler ordering information 4n2x(y)(z)-g, 4n3x(y)(z)-g, h11ax(y)(z)-g x = part no. (4n25, 4n26, 4n27, 4n28, 4n35, 4n36, 4n37, 4n38, h1 1a1, h11a2, h11a3, h11a4, h11a5) y = lead form option (s, sl, m or none) z = tape and reel option (t1, t2 or none) g= material option (g: green, none: non-green) option description quantity none standard 6 pin dip 50units/tube m wide lead forming 50units/tube s(t1) surface mount lead forming ? with option a taping 10 00 units/reel s(t2) surface mount lead forming ? with option b taping 100 0 units/reel sl(t1) surface mount lead forming(low profile) ? with option a taping 1000 units/reel sl(t2) surface mount lead forming(low profile) ? with option b taping 1000 units/reel
ct micro rev 2 proprietary & confidential page 12 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler carrier tape specifications dimensions in mm unless otherwise stated option s(t1) & sl(t1) option s(t2) & sl(t2)
ct micro rev 2 proprietary & confidential page 13 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler reflow profile profile feature pb-free assembly profile temperature min. (tsmin) 150c temperature max. (tsmax) 200c time (ts) from (tsmin to tsmax) 60-120 seconds ramp-up rate (t l to t p ) 3c/second max. liquidous temperature (t l ) 217c time (t l ) maintained above (t l ) 60 ? 150 seconds peak body package temperature 260c +0c / -5c time (t p ) within 5c of 260c 30 seconds ramp-down rate (t p to t l ) 6c/second max time 25c to peak temperature 8 minutes max.
ct micro rev 2 proprietary & confidential page 14 apr, 2016 4n25, 4n26, 4n27, 4n28 , 4n35, 4n36, 4n37, 4n38 h11a1, h11a2, h11a3, h11a4, h11a5 dc input 6-pin phototransistor optocoupler disclaimer ct micro reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ct micro does not assume any liability arising out of the application or use of any produc t or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ___________________________________________________ ___________________________________ discoloration might occur on the package surface af ter soldering, reflow or long term use. this does not impact the product performa nce nor the product reliability. ct micro are not authorized for use as critical com ponents in life support devices or systems without express written approval of ct micr o international corporation. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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